DTS3407品牌授权规格书.pdf
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1、1P-Channel 30 V(D-S)MOSFETFEATURES TrenchFET Power MOSFET 100%Rg TestedAPPLICATIONS Load Switch Notebook Adaptor Switch DC/DC Converter Power ManagementNotes:a.Based on TC=25 C.b.Surface mounted on 1 x 1 FR4 board.c.t=5 s.d.Maximum under steady state conditions is 175 C/W.MOSFET PRODUCT SUMMARY VDS(
2、V)RDS(on)()Max.ID(A)aQg(Typ.)-300.046 at VGS=-10 V-5.66.9 nC0.051 at VGS=-6 V-4.40.054 at VGS=-4.5 V-3.9G(SOT-23)SDTop View231ABSOLUTE MAXIMUM RATINGS(TA=25 C,unless otherwise noted)Parameter Symbol Limit Unit Drain-Source Voltage VDS-30VGate-Source VoltageVGS 20Continuous Drain Current(TJ=150 C)TC=
3、25 CID-5.6ATC=70 C-4TA=25 C-3.8b,cTA=70 C-3b,cPulsed Drain Current(t=300 s)IDM-20Continuous Source-Drain Diode Current TC=25 CIS-1.4TA=25 C-0.63b,cMaximum Power Dissipation TC=25 CPD1.7WTC=70 C1.1TA=25 C1.20b,cTA=70 C0.6b,cOperating Junction and Storage Temperature Range TJ,Tstg-55 to 150CTHERMAL RE
4、SISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb,d5 sRthJA100130C/WMaximum Junction-to-Foot(Drain)Steady StateRthJF6075 DTS34072Notes:a.Pulse test;pulse width 300 s,duty cycle 2%.b.Guaranteed by design,not subject to production testing.Stresses beyond those listed un
5、der“Absolute Maximum Ratings”may cause permanent damage to the device.These are stress ratings only,and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.Exposure to absolute maximumrating condit
6、ions for extended periods may affect device reliability.MOSFET SPECIFICATIONS(TJ=25 C,unless otherwise noted)Parameter Symbol Test Conditions Min.Typ.Max.Unit StaticDrain-Source Breakdown VoltageVDS VGS=0 V,ID=-250 A-30VVDS Temperature CoefficientVDS/TJ ID=-250 A-25mV/CVGS(th)Temperature Coefficient
7、VGS(th)/TJ 3.9Gate-Source Threshold VoltageVGS(th)VDS=VGS,ID=-250 A-1-2.5VGate-Source LeakageIGSSVDS=0 V,VGS=20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS=-30 V,VGS=0 V-1AVDS=-30 V,VGS=0 V,TJ=55 C-10On-State Drain CurrentaID(on)VDS -5 V,VGS=-10 V-20ADrain-Source On-State ResistanceaRDS(on)VGS=-10
8、 V,ID=-3.8 A 0.0430.046VGS=-6 V,ID=-3.3 A 0.0480.051VGS=-4.5 V,ID=-3 A 0.0510.054Forward Transconductanceagfs VDS=-5 V,ID=-3.8 A 10SDynamicbInput CapacitanceCiss VDS=-15 V,VGS=0 V,f=1 MHz705pFOutput CapacitanceCoss 93Reverse Transfer CapacitanceCrss 73Total Gate ChargeQg VDS=-15 V,VGS=-10 V,ID=-5 A1
9、4.522nCVDS=-15 V,VGS=-4.5 V,ID=-5 A6.910.4Gate-Source ChargeQgs 2.3Gate-Drain ChargeQgd 2.1Gate ResistanceRg f=1 MHz1.78.317Turn-On Delay Timetd(on)VDD=-15 V,RL=5 ID=-3 A,VGEN=-10 V,RG=1 612nsRise Timetr612Turn-Off Delay Timetd(off)1929Fall Timetf918Turn-On Delay Timetd(on)VDD=-15 V,RL=5 ID=-3 A,VGE
10、N=-6 V,RG=1 1020nsRise Timetr918Turn-Off Delay Timetd(off)1827Fall Timetf714Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC=25 C-1.4APulse Diode Forward CurrentaISM-20Body Diode VoltageVSDIS=-3 A-0.8-1.2VBody Diode Reverse Recovery TimetrrIF=-3 A,dI/dt=100 A/s,TJ=25
11、C1320nsBody Diode Reverse Recovery ChargeQrr510nCReverse Recovery Fall Timeta7nsReverse Recovery Rise Timetb6 DTS34073TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Output CharacteristicsOn-Resistance vs.Drain Current and Gate VoltageGate Charge0 5 10 15 20 0 0.5 1 1.5 2 ID-Drain Current(A)VDS-
12、Drain-to-Source Voltage(V)VGS=4 V VGS=4.5 V VGS=10 V thru 5 V VGS=3 V 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 RDS(on)-On-Resistance()ID-Drain Current(A)VGS=6 V VGS=4.5 V VGS=10 V 0 2 4 6 8 10 0 3 6 9 12 15 VGS-Gate-to-Source Voltage(V)Qg-Total Gate Charge(nC)VDS=24 V VDS=15 V VDS=8 V ID=3.8 A Tra
13、nsfer CharacteristicsCapacitanceOn-Resistance vs.Junction Temperature0 0.2 0.4 0.6 0.8 1 0 0.6 1.2 1.8 2.4 3 ID-Drain Current(A)VGS-Gate-to-Source Voltage(V)TC=25 C TC=125 C TC=-55 C 0 190 380 570 760 950 0 6 12 18 24 30 C-Capacitance(pF)VDS-Drain-to-Source Voltage(V)Ciss Coss Crss 0.7 0.9 1.1 1.3 1
14、.5-50-25 0 25 50 75 100 125 150 RDS(on)-On-Resistance(Normalized)TJ-Junction Temperature(C)VGS=4.5V,3A VGS=10 V,3.8 A;6 V,3.3 A DTS34074TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Source-Drain Diode Forward VoltageThreshold Voltage0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IS-Source Curr
15、ent(A)VSD-Source-to-Drain Voltage(V)TJ=150 C TJ=25 C 1.1 1.28 1.46 1.64 1.82 2-50-25 0 25 50 75 100 125 150 VGS(th)(V)TJ-Temperature(C)ID=250 A On-Resistance vs.Gate-to-Source VoltageSingle Pulse Power0 0.025 0.05 0.075 0.1 0.125 2 4 6 8 10 RDS(on)-On-Resistance()VGS-Gate-to-Source Voltage(V)TJ=125
16、C TJ=25 C ID=3.8 A 01020300.0010.010.1110100Time(s)Power(W)Safe Operating Area0.01 0.1 1 10 100 0.1 1 10 100 ID-Drain Current(A)VDS-Drain-to-Source Voltage(V)*VGS minimum VGS at which RDS(on)is specified 100 ms Limited by RDS(on)*1 ms TA=25 C BVDSS Limited 10 ms 100 s 10 s,1 s DC DTS34075TYPICAL CHA
17、RACTERISTICS(25 C,unless otherwise noted)*The power dissipation PD is based on TJ(max.)=150 C,using junction-to-case thermal resistance,and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.It is used to determine the current rating,when this rating
18、 falls below the packagelimit.Current Derating*0 2 3 5 6 0 25 50 75 100 125 150 ID-Drain Current(A)TC-Case Temperature(C)Power,Junction-to-Case0 0.5 1 1.5 2 0 25 50 75 100 125 150 Power(W)TC-Case Temperature(C)Power,Junction-to-Ambient0 0.22 0.44 0.66 0.88 0 25 50 75 100 125 150 Power(W)TA-Ambient T
19、emperature(C)DTS34076TYPICAL CHARACTERISTICS(25 C,unless otherwise noted)Normalized Thermal Transient Impedance,Junction-to-Ambient10-310-2000101110-110-41000.20.1Square Wave Pulse Duration(s)Normalized Effective TransientThermal Impedance10.10.01Duty Cycle=0.5Single Pulse0.020.050.001t1t2Notes:PDM1
20、.Duty Cycle,D=2.Per Unit Base=RthJA=175 C/W3.TJM-TA=PDMZthJA(t)t1t24.Surface MountedNormalized Thermal Transient Impedance,Junction-to-Foot10.10.010.2Duty Cycle=0.5Square Wave Pulse Duration(s)Normalized Effective TransientThermal ImpedanceSingle Pulse0.110-310-2110-110-40.020.05 DTS34071SOT-23(TO-2
21、36):3-LEADbEE1132See1DA2AA1CSeating Plane0.10 mm0.004CCL1LqGauge PlaneSeating Plane0.25 mmDimMILLIMETERS INCHES Min Max Min Max A0.891.120.0350.044A10.010.100.00040.004A20.881.020.03460.040b0.350.500.0140.020c0.0850.180.0030.007D2.803.040.1100.120E2.102.640.0830.104E11.201.400.0470.055e0.95 BSC0.037
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