FGH40N65UFD Datasheet 数据手册 规格书.pdf
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1、tm2008 Fairchild Semiconductor CFGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT March 2009Absolute Maximum RatingsNotes:1:Repetitive rating:Pulse width limited by max.junction temperatureThermal CharacteristicsSymbolDescriptionRatingsUnitsVCESCollector to Emitter Voltage650VVGESGate to Emitte
2、r Voltage 20VICCollector Current TC=25oC80ACollector Current TC=100oC40AICM(1)Pulsed Collector Current TC=25oC 120APDMaximum Power Dissipation TC=25oC290WMaximum Power Dissipation TC=100oC116WTJ Operating Junction Temperature-55 to+150oCTstgStorage Temperature Range-55 to+150oCTLMaximum Lead Temp.fo
3、r solderingPurposes,1/8”from case for 5 seconds300oCSymbolParameterTyp.Max.UnitsRJC(IGBT)Thermal Resistance,Junction to Case-0.43oC/WRJC(Diode)Thermal Resistance,Junction to Case-1.45oC/WRJAThermal Resistance,Junction to Ambient-40oC/WGECECGCOLLECTOR(FLANGE)FGH40N65UFD650V,40A Field Stop IGBTFeature
4、s High current capabilityLow saturation voltage:VCE(sat)=1.8V IC=40AHigh input impedanceFast switching RoHS compliantApplicationsSolar Inverter,UPS,SMPS,PFCGeneral DescriptionUsing Novel Field Stop IGBT Technology,Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance forSolar Inv
5、erter,UPS,SMPS and PFC applications where lowconduction and switching losses are FGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT Package Marking and Ordering InformationElectrical Characteristics of the IGBT TC=25C unless otherwise notedDevice MarkingDevicePackagePackaging TypeQty per TubeMax
6、 Qty per BoxFGH40N65UFDFGH40N65UFDTUTO-247Tube30ea-SymbolParameterTest ConditionsMin.Typ.Max.UnitsOff Characteristics BVCESCollector to Emitter Breakdown Voltage VGE=0V,IC=250A650-VBVCESTJTemperature Coefficient of BreakdownVoltageVGE=0V,IC=250A-0.6-V/oCICESCollector Cut-Off CurrentVCE=VCES,VGE=0V-2
7、50AIGESG-E Leakage CurrentVGE=VGES,VCE=0V-400nAOn Characteristics VGE(th)G-E Threshold VoltageIC=250A,VCE=VGE 4.05.06.5VVCE(sat)Collector to Emitter Saturation VoltageIC=40A,VGE=15V-1.82.4VIC=40A,VGE=15V,TC=125oC-2.0-VDynamic CharacteristicsCiesInput CapacitanceVCE=30V,VGE=0V,f=1MHz-2110-pFCoesOutpu
8、t Capacitance-200-pFCresReverse Transfer Capacitance-60-pFSwitching Characteristicstd(on)Turn-On Delay TimeVCC=400V,IC=40A,RG=10,VGE=15V,Inductive Load,TC=25oC-24-nstrRise Time-44-nstd(off)Turn-Off Delay Time-112-nstfFall Time-3060nsEonTurn-On Switching Loss-1.19-mJEoffTurn-Off Switching Loss-0.46-m
9、JEts Total Switching Loss-1.65-mJtd(on)Turn-On Delay TimeVCC=400V,IC=40A,RG=10,VGE=15V,Inductive Load,TC=125oC -24-nstrRise Time-45-nstd(off)Turn-Off Delay Time-120-nstfFall Time-40-nsEonTurn-On Switching Loss-1.2-mJEoffTurn-Off Switching Loss-0.69-mJEts Total Switching Loss-1.89-mJQgTotal Gate Char
10、geVCE=400V,IC=40A,VGE=15V -120-nCQgeGate to Emitter Charge-14-nCQgcGate to Collector Charge-58-nCFGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT Electrical Characteristics of the Diode TC=25C unless otherwise notedSymbolParameterTest ConditionsMin.Typ.MaxUnitsVFMDiode Forward VoltageIF=20ATC=
11、25oC-1.952.6VTC=125oC-1.85-trrDiode Reverse Recovery TimeIES=20A,dIES/dt=200A/sTC=25oC-45-nsTC=125oC-140-QrrDiode Reverse Recovery ChargeTC=25oC-75-nCTC=125oC-375-FGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT Typical Performance CharacteristicsFigure 1.Typical Output Characteristics Figure
12、2.Typical Output Characteristics Figure 3.Typical Saturation Voltage Figure 4.Transfer Characteristics Characteristics Figure 5.Saturation Voltage vs.Case Figure 6.Saturation Voltage vs.VGE Temperature at Variant Current Level0.01.53.04.56.002040608010012020VTC=25oC 15V12V10VVGE=8VCollector Current,
13、IC ACollector-Emitter Voltage,VCE V0.01.53.04.56.002040608010012020VTC=125oC 15V12V10VVGE=8VCollector Current,IC ACollector-Emitter Voltage,VCE V01234020406080100120Common EmitterVGE=15VTC=25oC TC=125oC Collector Current,IC ACollector-Emitter Voltage,VCE V56789101112020406080100120Common EmitterVCE=
14、20VTC=25oC TC=125oC Collector Current,IC AGate-Emitter Voltage,VGE V2550751001251.01.52.02.53.03.580A40AIC=20ACommon EmitterVGE=15V Collector-Emitter Voltage,VCE VCollector-EmitterCase Temperature,TC oC48121620048121620IC=20A40A80ACommon EmitterTC=-40oC Collector-Emitter Voltage,VCE VGate-Emitter Vo
15、ltage,VGE VFGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT Typical Performance CharacteristicsFigure 7.Saturation Voltage vs.VGE Figure 8.Saturation Voltage vs.VGE Figure 9.Capacitance Characteristics Figure 10.Gate charge CharacteristicsFigure 11.SOA Characteristics Figure 12.Turn-on Charact
16、eristics vs.Gate Resistance48121620048121620IC=20A40A80ACommon EmitterTC=25oC Collector-Emitter Voltage,VCE VGate-Emitter Voltage,VGE V48121620048121620IC=20A40A80ACommon EmitterTC=125oC Collector-Emitter Voltage,VCE VGate-Emitter Voltage,VGE V0.1110010002000300040005000Common EmitterVGE=0V,f=1MHzTC
17、=25oCCrssCossCiss Capacitance pFCollector-Emitter Voltage,VCE V3005010015003691215Common EmitterTC=25oC300V200VVcc=100V Gate-Emitter Voltage,VGE VGate Charge,Qg nC0102030405010100Common EmitterVCC=400V,VGE=15VIC=40ATC=25oC TC=125oC td(on)tr Switching Time nsGate Resistance,RG 20011010010000.010.1110
18、1001ms10 msDCSingle NonrepetitivePulse TC=25oCCurves must be deratedlinearly with increasein temperature10 s100 s Collector Current,Ic ACollector-Emitter Voltage,VCE VFGH40N65UFD Rev.A1FGH40N65UFD 600V,40A Field Stop IGBT Typical Performance CharacteristicsFigure 13.Turn-off Characteristics vs.Figur
19、e 14.Turn-on Characteristics vs.Gate Resistance Collector Current Figure 15.Turn-off Characteristics vs.Figure 16.Switching Loss vs.Gate Resistance Collector Current Figure 17.Switching Loss vs.Collector Current Figure 18.Turn off Switching SOA Characteristics01020304050101001000Common EmitterVCC=40
20、0V,VGE=15VIC=40ATC=25oC TC=125oC td(off)tf Switching Time nsGate Resistance,RG 55002040608010100Common EmitterVGE=15V,RG=10 TC=25oC TC=125oC trtd(on)Switching Time nsCollector Current,IC A5002040608010100600Common EmitterVGE=15V,RG=10 TC=25oC TC=125oC td(off)tf Switching Time nsCollector Current,IC
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